DESCRIPTION

2SC5807 is a silicon NPN epitaxial Transistor.

It designed with high collector current and high collector dissipation.

FEATURE

●Small collector to Emitter saturation voltage

APPLICATION

For storobe ,DC/DC convertor,power amplify apprication

〈Transistor〉

2SC5807

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type

OUTLINE DRAWING

Unit：ｍｍ

Note)

The dimension without tolerance represent central value.

MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

RATINGS

UNIT

V

CBO

Collector to Base voltage

50

V

V

EBO

Emitter to Base voltage

6

V

V

CEO

Collector to Emitter voltage

15

V

I

C

Collector current

5

I

CM

Peak Collecter current *1

10

A

Collector dissipation (Total、Ta=25℃)

0.5

P

C

Collector dissipation (Total、Ta=25℃) *2

2

W

T

j

Junction temperature

＋150

℃

T

stg

Storage temperature

-55∼＋150

℃

*1 Single Pulse Pw=10msec

*2 Pakkage mounted on 35mm

×50mm×0.8mm ceramic board.

MARKING

Ａ Ｋ

Ｑ

TYPE NAME

LOT No.

ｈ

TERMINAL CONNECTER

Ｅ: EMITTER

Ｃ: COLLECTOR

Ｂ: BASE

EIAJ : SC-62

JEDEC :

E

C

B

4.6 MAX

1.6

3.0

1.5

0.53

MAX

0.48 MAX

1.5

0.4

MARKING

ISAHAYA ELECTRONICS CORPORATION