K6T2008V2A-TF10 datasheet(2/10 Pages) SAMSUNG

Part #	K6T2008V2A-TF10

Description	256Kx8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6T2008V2A, K6T2008U2A Family

Revision 2.01

October 2001

256Kx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION

The K6T2008V2A and K6T2008U2A families are fabricated by

SAMSUNG

′s advanced CMOS process technology. The fam-

ily

support various operating temperature ranges and have

various package types for user flexibility of system design. The

family also support low data retention voltage for battery back-

up operation with low data retention current.

FEATURES

• Process Technology: TFT

• Organization: 256Kx8

• Power Supply Voltage

K6T2008V2A Family: 3.0V~3.6V

K6T2008U2A Family: 2.7V~3.3V

• Low Data Retention Voltage: 2V(Min)

• Three State Outputs

• Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F

48-FBGA-6.00x7.00

PIN DESCRIPTION

Name

Function

Name

Function

CS1,CS2 Chip Select Inputs

I/O1~I/O8 Data Inputs/Outputs

OE

Output Enable Input

Vcc

Power

WE

Write Enable Input

Vss

Ground

A0~A17

Address Inputs

NC

No Connection

PRODUCT FAMILY

1. The parameters are tested with 30pF test load

2. K6T2008V2A Family = 35mA

Product Family

Operating Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

(ISB1, Max)

Operating

(ICC2,Max)

K6T2008V2A-B

Commercial(0~70

°C)

3.0~3.6V

70/85ns

10

µA

30mA2)

32-TSOP1-0820F

32-TSOP1-0813.4F

48-FBGA-6.00x7.00

K6T2008U2A-B

2.7~3.3V

701)/85/100ns

K6T2008V2A-F

Industrial(-40~85

°C)

3.0~3.6V

701)/85/100ns

15

µA

K6T2008U2A-F

2.7~3.3V

FUNCTIONAL BLOCK DIAGRAM

A11

A9

A8

A13

WE

CS2

A15

VCC

A17

A16

A14

A12

A7

A6

A5

A4

OE

A10

CS1

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

32-sTSOP1

Type - Forward

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

A2

Precharge circuit.

Memory array

1024 rows

256

×8 columns

I/O Circuit

Column select

Clk gen.

Row

select

A0

A1 A17 A6 A5

A3

A4

A16

A15

A14

A13

A12

A11

A9

I/O1

Data

cont

Data

cont

I/O8

A10

A8

A7

CS1

WE

OE

CS2

Control

logic

32-TSOP1

48-FBGA: Top View (Ball Down)

A0

A1

CS2

A3

A6

A8

I/O5

A2

WE

A4

A7

I/O1

I/O6

NC

A5

I/O2

Vss

Vcc

Vss

I/O7

NC

A17

I/O3

I/O8

OE

CS1

A16

A15

I/O4

A9

A10

A11

A12

A13

A14

1

2

3

4

5

6

A

B

C

D

E

F

G

H

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