K6T2008U2A-B datasheet(6/10 Pages) SAMSUNG

Part #	K6T2008U2A-B

Description	256Kx8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6T2008V2A, K6T2008U2A Family

Revision 2.01

October 2001

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)

tAA

tRC

tOH

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

CS1

Address

OE

Data out

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

CS2

tOH

tAA

tOLZ

tLZ

tOHZ

tHZ(1,2)

tRC

tCO2

tOE

tCO1

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K6T2008U2A-B Datasheet(PDF) 6 Page - Samsung semiconductor

K6T2008U2A-B Datasheet(HTML) 6 Page - Samsung semiconductor

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