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POWER DISSIPATION RATINGS

ABSOLUTE MAXIMUM RATINGS

TB5R3

SLLS643A – SEPTEMBER 2005 – REVISED OCTOBER 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PART MARKING

LEAD FINISH

STATUS

TB5R3DW

TB5R3

Gull-Wing SOIC

NiPdAu

Production

TB5R3D

TB5R3

SOIC

NiPdAu

Production

(1)

Add the R suffix for tape and reel carrier (i.e., TB5R3DR)

(2)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com.

THERMAL RESISTANCE,

DERATING

CIRCUIT BOARD

POWER RATING

POWER RATING

PACKAGE

JUNCTION-TO-AMBIENT

MODEL

WITH NO AIR FLOW

831 mW

120.3

°C/W

8.3 mW/

°C

332 mW

DW

1240 mW

80.8

°C/W

12.4 mW/

°C

494 mW

763 mW

131.1

°C/W

7.6 mW/

°C

305 mW

D

1190 mW

84.1

°C/W

11.9 mW/

°C

475 mW

(1)

This is the inverse of the junction-to-ambient thermal resistance when board-mounted with no air flow.

(2)

In accordance with the low-K thermal metric definitions of EIA/JESD51-3.

(3)

In accordance with the high-K thermal metric definitions of EIA/JESD51-7.

THERMAL CHARACTERISTICS

PARAMETER

PACKAGE

VALUE

UNIT

DW

53.7

θ

JB

Junction-to-Board Thermal Resistance

°C/W

D

47.5

DW

47.1

θ

JC

Junction-to-Case Thermal Resistance

°C/W

D

44.2

over operating free-air temperature range unless otherwise noted

(1)

UNIT

0 V to 6 V

8.4 V

All pins

±3.5 kV

ESD

All pins

±2 kV

Continuous power dissipation

See Dissipation Rating Table

-65

°C to 150°C

(1)

Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Tested in accordance with JEDEC Standard 22, Test Method A114-A.

(3)

Tested in accordance with JEDEC Standard 22, Test Method C101.

2

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