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STP12NM50FP Datasheet(PDF) 5 Page - STMicroelectronics |
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STP12NM50FP Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD Electrical characteristics 5/18 Table 6. Switching times Symbol Parameter Test Condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=250 V, ID= 6A, RG=4.7Ω, VGS=10V (see Figure 17) 19 10 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=400 V, ID= 12A, RG=4.7Ω, VGS=10V (see Figure 17) 39 18 29 ns ns ns Table 7. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD Source-drain current 12 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, Tj=25°C di/dt = 100A/µs, VDD=30V, (see Figure 22) 140 800 11 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, Tj=150°C di/dt = 100A/µs, VDD=30V, (see Figure 22) 252 1890 15 ns nC A |
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