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1N914BWT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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1N914BWT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 1 March 2008 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode • Fast Switching Diode (Trr <4.0nsec) • Flat Lead, Surface Mount Device under 0.70mm Height • Extremely Small Outline Plastic Package SOD523F • Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant • Matte Tin (Sn) Lead Finish • Green Mold Compound Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics *Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics* T a=25°C unless otherwise noted Symbol Parameter Value Units VRSM Non-Repetitive Peak Reverse Voltage 75 V VRRM Repetitive Peak Reverse Voltage 75 V I FRM Repetitive Peak Forward Current 300 mA TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Value Unit RθJA Thermal Resistance, Junction to Ambient 500 °C/W PD Power Dissipation(TC=25°C) 200 mW Symbol Parameter Test Conditions Min Typ Max Units BVR Breakdown Voltage IR = 100 μA IR = 5 μA 100 75 V IR Reverse Current VR = 20 V VR = 75 V 25 5 nA μA VF Forward Voltage 1N4448WT/ 914WT 1N4448WT 1N4448WT/ 914WT IF = 5 mA IF = 10 mA IF = 100 mA 0.62 0.72 1 1 V C O Diode Capacitance VR = 0, f = 1 MHz 4 pF TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V I RR = 1 mA, RL = 100 Ω 4 nS SOD-523F Band Indicates Cathode* Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 |
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