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TSFF5510 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSFF5510
Description  High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5510 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 81835
Rev. 1.0, 07-Feb-08
TSFF5510
Vishay Semiconductors
For technical support, contact: emittertechsupport@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
010
20
30
40
50
60
70
80
90
100
21007
T
amb - Ambient Temperature (°C)
R
thJA = 250 K/W
Figure 2. Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
0
10
203040
506070
80
90 100
T
amb - Ambient Temperature (°C)
21008
R
thJA = 250 K/W
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.3
1.45
1.7
V
IF = 450 mA, tp = 100 µs
VF
1.5
1.75
2.1
V
IF = 1 A, tp = 100 µs
VF
2.1
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
110
pF
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
32
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φ
e
44
55
89
mW
IF = 450 mA, tp = 100 µs
φ
e
200
247
400
mW
IF = 1 A, tp = 100 µs
φ
e
550
mW
Temperature coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.35
%/K
Angle of half intensity
ϕ
± 38
deg
Peak wavelength
IF = 100 mA
λ
p
870
nm
Spectral bandwidth
IF = 100 mA
Δλ
55
nm
Temperature coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz


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