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| STI17NF25 |
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 STMICROELECTRONICS
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STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25 Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=125V, ID=8.5A, RG=4.7Ω, VGS=10V 8.8 17.2 ns ns td(off) tf Turn-off delay time Fall time VDD=125V, ID=8.5A, RG=4.7Ω, VGS=10V 21 8.8 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 17 68 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=17A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17A, di/dt = 100A/µs, VDD = 50 V, Tj = 25°C 157 0.91 11.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17A, di/dt = 100A/µs, VDD = 50 V, Tj=150°C 196 1.34 13.7 ns µC A |
