XSD57120 datasheet(1/7 Pages) STMICROELECTRONICS

Part #	XSD57120

Description	RF POWER TRANSISTORS The LdmoSTFAMILY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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SD57120

RF POWER TRANSISTORS

The

LdmoST FAMILY

PRELIMINARY DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

ν

EXCELLENT THERMAL STABILITY

ν

COMMON SOURCE CONFIGURATION,

PUSH-PULL

ν

POUT = 120 W with 13 dB gain @ 960 MHz

ν

BeO FREE PACKAGE

ν

INTERNAL INPUT MATCHING

DESCRIPTION

The SD57120 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The SD57120 is designed for high gain

and

broadband

performance

operating

in

common source mode at 28V. Its internal

matching

makes

it

ideal

for

base

station

applications requiring high linearity.

PIN CONNECTION

March 2000

ABSOLUTE MAXIMUM RATINGS (Tcase =25

oC)

Symbol

Parameter

Val ue

Uni t

V(BR)DSS

Drain Source Voltage

65

V

VGS

Gat e-Source Voltage

± 20

V

ID

Drain Current

14

A

PDISS

Power Dissipation (@ T c= 70

oC)

236

W

Tj

Max. O perat ing Junction Temperature

200

oC

TSTG

Storage Temperature

-65 to 150

oC

THERMAL DATA

Rth (j-c)

Junct ion-Case Thermal Resistance

0.55

oC/W

M252

epoxy sealed

®

ORDER CODE

BRANDING

SD57120

XSD57120

1. Drain

4. Gate

2. Drain

5. Gate

3. Source

1/7

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