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SD57120 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD57120 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 7 page SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν EXCELLENT THERMAL STABILITY ν COMMON SOURCE CONFIGURATION, PUSH-PULL ν POUT = 120 W with 13 dB gain @ 960 MHz ν BeO FREE PACKAGE ν INTERNAL INPUT MATCHING DESCRIPTION The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION March 2000 ABSOLUTE MAXIMUM RATINGS (Tcase =25 oC) Symbol Parameter Val ue Uni t V(BR)DSS Drain Source Voltage 65 V VGS Gat e-Source Voltage ± 20 V ID Drain Current 14 A PDISS Power Dissipation (@ T c= 70 oC) 236 W Tj Max. O perat ing Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA Rth (j-c) Junct ion-Case Thermal Resistance 0.55 oC/W M252 epoxy sealed ® ORDER CODE BRANDING SD57120 XSD57120 1. Drain 4. Gate 2. Drain 5. Gate 3. Source 1/7 |
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