CHA5012

X Band Driver Amplifier

Ref. : DSCHA50126286 - 13 Oct 06

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Vc= +7.5V (Pulse 100µs 20%)

Symbol

Parameter

Min

Typ

Max

Unit

Top

Operating temperature range

-40

80

°C

Fop

Operating frequency range

9.2

10.8

GHz

G

Small signal gain at 25°C

21

23

25

dB

∆G

Small signal gain flatness at 25°C

±0.5

dB

∆G_T

Linear gain variation vs temperature

-0.03

dB/°C

P1dB

Output power at 1dB compression at 25°C

28

d Bm

P3dB

Output power at 3dB compression at 25°C

Output power at 3dB compression at 80°C

28

27.5

29.5

29

dBm

PAE_3dBc

Pae at 3dB compression at 25°C

Pae at 3dB compression at 80°C

33

30

40

37

%

dBS11

Input Return Loss

-12

-10

dB

dBS22

Output Return Loss

-10

-7

dB

Vc

Power supply voltage

7.5

V

Icq

Power supply quiescent current (1)

200

mA

Consumption under 3dB compression

290

mA

Vctrl

Collector current control voltage

5

V

Ictrl

Biasing circuit consumption

10

mA

TI

TTL input voltage

5

V

I_TI

TTL input current

1

mA

(1) For Vc=7.5V, TTL interface settles Icq to 200 mA . If needed, Icq can be tuned thanks to Vctrl if the biasing

circuit is used.

Tamb = 25°C

Symbol

Parameter

Values

Unit

Cmp

Compression level (3)

9

dB

Vc

Power supply voltage (4)

10

V

Icq

Power supply quiescent current

320

mA

Ic_sat

Power supply current in saturation

350

mA

Vct

Collector current control voltage

6.5

V

Tj

Maximum Junction temperature (5)

175

°C

Tstg

Storage temperature range

-55 to +125

°C

(2)

Operation of this device above anyone of these parameters may cause permanent damage.

(3)

For higher compression the level limit can be increased by decreasing the voltage Vc using the rate

0.5 V / dBc

(4)

Without RF input power

(5)

Equivalent Thermal Resistance to Backside : 55°C/ W