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CHA3689 Datasheet(PDF) 10 Page - United Monolithic Semiconductors |
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CHA3689 Datasheet(HTML) 10 Page - United Monolithic Semiconductors |
10 / 10 page CHA3689 12.5-30GHz Low Noise Amplifier Ref. : DSCHA36897082 - 23 Mar 07 10/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. The requirement is not to exceed Vds = 3.5Volt ( internal Drain to Source voltage ). We propose two standard biasing: • Low Noise and low consumption: Vd = 4V and B, D not connected (NC). Idd = 90mA & Pout-1dB = 14dBm Typical. • Low Noise and higher output power: Vd = 4V and B, D grounded. Idd = 120mA & Pout-1dB = 15dBm Typical. Ordering Information Chip form : CHA3689-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. 3k Vd1 Vd2 Vd3 3.3 0.42k 3k 5 0.42k 1.34k 42 0.4k 112 RFin RFout B D 13.4 9.9 20 11.6 3k Vd1 Vd2 Vd3 3.3 0.42k 3k 5 0.42k 1.34k 42 0.4k 112 RFin RFout B D 13.4 9.9 20 11.6 B D 13.4 9.9 20 11.6 |
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