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| STP200N4F3 |
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 STMICROELECTRONICS
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STB200N4F3 - STP200N4F3 Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC = 100°C 120 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2.0 W/°C EAS (3) 3. Starting Tj = 25°C, ID = 60A, VDD= 25V Single pulse avalanche energy 862 mJ dv/dt(4) 4. ISD ≤60A, di/dt ≤440 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 4.2 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 D²PAK Rthj-case Thermal resistance junction-case max 0.50 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board, 1inch² 2 oz. Cu. Thermal resistance junction-pcb max -- 35 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W |
