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EM681FV16AU Series
Low Power, 512Kx16 SRAM
9
DATA RETENTION CHARACTERISTICS
NOTES
1. See the ISB1 measurement condition of data sheet page 4.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCC for Data Retention
VDR
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.6
V
Data Retention Current
IDR
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
-
-
4
uA
Chip Deselect to Data Retention Time
tSDR
See data retention wave form
0-
-
ns
Operation Recovery Time
tRDR
tRC
--
tSDR
tRDR
Data Retention Mode
CS > Vcc-0.2V
Vcc
2.7V
2.2V
VDR
CS
GND
DATA RETENTION WAVE FORM