750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

HIGH-POWERGaAlAsIREMITTERCHIPS

OD-880-C

FEATURES

• High reliability LPE GaAlAs IRLED chips

• Graded-bandgap LED structure for high radiant power

output

• 880nm peak emission

• Good ohmic contacts (gold alloys)

• Good bondability

All dimensions are nominal values in inches unless

otherwise specified.

.014

.014

N

P

.005

.003

GOLD

CONTACTS

EMITTING

SURFACE

.006

Spectral Bandwidth at 50%,

Capacitance, C

Rise Time

Fall Time

5

880

80

1.55

30

17

0.5

0.5

1.9

nm

nm

Volts

Volts

pF

sec

sec

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

mW

8

14

2

Power Dissipation

Continuous Forward Current

Peak Forward Current (10 s, 300 Hz)

Reverse Voltage

Storage and Operating Temperature Range

Maximum Junction Temperature

190mW

100mA

3A

5V

-65°C to 150°C

150°C

ABSOLUTE MAXIMUM RATINGS AT 25°C

The exact performance data depends on your package configuration and technique. Data listed in this specification is

for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days

from the shipment date. Opto Diode must be notified of any discrepancies within this period.

RoHS