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SD1542-4 Datasheet(PDF) 1 Page - STMicroelectronics

Part # SD1542-4
Description  RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD1542-4 Datasheet(HTML) 1 Page - STMicroelectronics

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AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (M112)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF
.
600 WATTS (min.) IFF 1030/1090 MHz
.
REFRACTORY GOLD METALLIZATION
.
6.0 dB MIN. GAIN
.
BALLASTING AND LOW THERMAL
REISTANCE FOR RELIABILITY AND
RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1542-04 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1542-
04 is designed for applications requiring high peak
power and low duty cycles such as IFF. The
SD1542-04 is packaged in a hermetic metal/ce-
ramic package with internal input matching, re-
sulting in improved broadband performance and
low thermal reistance.
PIN CONNECTION
BRANDING
SD1542-4
ORDER CODE
SD1542-04
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
40
A
PDISS
Power Dissipation
1350
W
TJ
Junction Temperature
+200
°C
TSTG
Storage Temperature
− 65 to +150
°C
RTH(j-c)
Junction-Case Thermal Resistance
0.06
°C/W
SD1542-04
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
1/5


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