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STT818B Datasheet(PDF) 4 Page - STMicroelectronics |
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STT818B Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 10 page Electrical characteristics STT818B 4/10 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = -30 V VCB = -30 V TC = 125°C -0.1 -20 µA µA IEBO Collector-cut-off current (IC = 0) VEB = -5 V -0.1 µA V(BR)CEO (1) 1. Pulse duration = 300 µs, duty cycle 1.5 %. Collector-emitter breakdown voltage (IB = 0) IC = -10 mA -30 V VCE(sat) (1) Collector-emitter saturation voltage IC = -0.5 A _ IB = -5 mA IC = -1.2 A IB = -12 mA IC = -2 A _ IB = -20 mA -0.075 -0.21 -0.15 -0.3 -0.5 V V V VBE(sat) (1) Base-emitter saturation voltage IC = -0.5 A _ IB = -5 mA IC = -1.2A _ IB = -12 mA IC = -2A _ IB = -20 mA -0.74 -1.1 -1.1 -1.2 V V V hFE (1) DC current gain IC = -0.5 A VCE = -1 V IC = -2.5 A VCE = -3 V 100 100 VBE(ON) (1) Base-emitter voltage IC = -0.5 A VCE = -2 V -0.71 -1.1 V |
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