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W39L020P-70B Datasheet(PDF) 1 Page - Winbond |
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W39L020P-70B Datasheet(HTML) 1 Page - Winbond |
1 / 26 page W39L020 256K × 8 CMOS FLASH MEMORY Publication Release Date: November 11, 2002 - 1 - Revision A4 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide ( × 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L020 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers. 2. FEATURES • Single 3.3-volt operations − 3.3-volt Read − 3.3-volt Erase − 3.3-volt Program • Fast Program operation: − Byte-by-Byte programming: 50 µS (max.) • Fast Erase operation: − Chip Erase cycle time: 100 mS (max.) − Sector Erase cycle time: 25mS (max.) − Page Erase cycle time: 25mS (max.) • Read access time: 70/90 nS • 4 Even sectors with 64K bytes each, which is composed of 16 flexible pages with 4K bytes • Any individual sector or page can be erased • Hardware protection: − Optional 16K byte or 64K byte Top/Bottom Boot Block with lockout protection • Flexible 4K-page size can be used as Parameter Blocks • Typical program/erase cycles: 1K/10K • Twenty-year data retention • Low power consumption − Active current: 10 mA (typ.) − Standby current: 5 µA (typ.) • End of program detection − Software method: Toggle bit/Data polling • TTL compatible I/O • JEDEC standard byte-wide pinouts • Available packages: 32L PLCC, 32L TSOP (8 x 20 mm) and 32L STSOP (8 x 14 mm) |
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