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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+3.5 Vdc

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

0 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 8.5 mW/°C above 85 °C)

0.753 W

Thermal Resistance

(channel to ground paddle)

119.5 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (Vdc)

Idd (mA)

+2.5

51

+3.0

53

+3.5

56

Typical Supply Current vs. Vdd

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES

GOLD OVER 50 MICROINCHES MINIMUM NICKEL

3. DIMENSIONS ARE IN INCHES [MILLIMETERS]

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE

SOLDERED TO PCB RF GROUND

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

HMC565LC5

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 6 - 20 GHz

v00.0906