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STB55NF06L-1 Datasheet(PDF) 4 Page - STMicroelectronics |
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STB55NF06L-1 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STB55NF06L - STB55NF06L-1 - STP55NF06L 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 11.7 V RDS(on) Static drain-source on resistance VGS= 5V, ID= 27.5A VGS= 10V, ID= 27.5A 0.016 0.014 0.020 0.018 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 27.5A 30 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 1700 300 105 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=48V, ID = 55A VGS =4.5V 27 7 10 37 nC nC nC |
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