TCDT1110_08 datasheet(2/8 Pages) VISHAY

Part #	TCDT1110

Description	Optocoupler, Phototransistor Output

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83531

784

Rev. 1.8, 16-May-08

TCDT1110/TCDT1110G

Vishay Semiconductors

Optocoupler, Phototransistor

Output

Notes

(1) Tamb = 25 °C unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this

document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

(2) Refer to wave profile for soldering conditions for through hole devices.

Note

Tamb = 25 °C unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Note

According to DIN EN 60747-5-5 see figure 1. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance

with the safety ratings shall be ensured by means of suitable protective circuits.

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

50

mA

Collector peak current

tp/T = 0.5, tp ≤ 10 ms

ICM

100

mA

Power dissipation

Pdiss

150

mW

Junction temperature

Tj

125

°C

COUPLER

Isolation test voltage (RMS)

t = 1 min

VISO

5300

VRMS

Total power dissipation

Ptot

250

mw

Ambient temperature range

Tamb

- 55 to + 100

°C

Storage temperature range

Tstg

- 55 to + 125

°C

Soldering temperature (2)

2 mm from case t

≤ 10 s

Tsld

260

°C

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 50 mA

VF

1.2

1.5

V

Junction capacitance

VR = 0, f = 1 MHz

Cj

50

pF

OUTPUT

Collector emitter voltage

IC = 1 mA

VCEO

70

V

Emitter collector voltage

IE = 100 µA

VECO

7V

Collector-emitter cut-off current

VCE = 30 V, IF = 0

ICEO

150

nA

COUPLER

Collector emitter saturation voltage

IF = 10 mA, IC = 0.5 mA

VCEsat

0.3

V

Cut-off frequency

VCE = 5 V, IF = 10 mA, RL = 1 Ω

fc

110

kHz

Coupling capacitance

f = 1 MHz

Ck

0.3

pF

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

IC/IF

VCE = 20 V, IF = 10 mA

CTR

100

%

MAXIMUM SAFETY RATINGS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward current

IF

130

mA

OUTPUT

Power dissipation

Pdiss

265

mW

COUPLER

Rated impulse voltage

VIOTM

6kV

Safety temperature

Tsi

150

°C

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