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7N60L Datasheet(PDF) 6 Page - Unisonic Technologies |
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7N60L Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 7 page 7N60L Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 7 www.unisonic.com.tw QW-R502-189.A TYPICAL CHARACTERISTICS 0.0 0 Drain Current, ID (A) 510 On-Resistance Variation vs. Drain Current and Gate Voltage 15 20 25 *Note: TJ=25℃ VGS=10V 0.5 1.0 1.5 2.0 2.5 VGS=20V 100 10-1 0.2 Source-Drain Voltage, VSD (V) Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.4 0.6 0.8 1.0 1.2 25℃ 150℃ 101 *Notes: 1. VGS=0V 2. 250μs Pulse Test 2000 0 10-1 Drain-SourceVoltage, VDS (V) Capacitance Characteristics 1800 400 100 101 *Notes: 1. VGS=0V 2. f = 1MHz 1000 800 CRSS COSS CISS CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD 101 100 10-1 Drain-Source Voltage, VDS (V) Maximum Safe Operating Area 102 101 100 100μs 103 DC 1ms 10ms *Notes: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse Operation in This Area is Limited by RDS(ON) 102 |
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