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SFH615AGB Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH615AGB Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83672 2 Rev. 1.6, 10-Jan-08 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V DC forward current IF 60 mA Surge forward current tP ≤ 10 ms IFSM 2.5 A Power dissipation Pdiss 100 mW OUTPUT Collector emitter voltage VCE 70 V Emitter collector voltage VEC 7.0 V Collector current IC 50 mA tP ≤ 10 ms IC 100 mA Total power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 VISO 5300 VRMS Creepage distance ≥ 7mm Clearance distance ≥ 7mm Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Soldering temperature (2) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 13 pF Thermal resistance Rthja 750 K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Thermal resistance Rthja 500 K/W |
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