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SFH615AGB Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SFH615AGB
Description  Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH615AGB Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83672
2
Rev. 1.6, 10-Jan-08
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6.0
V
DC forward current
IF
60
mA
Surge forward current
tP ≤ 10 ms
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7.0
V
Collector current
IC
50
mA
tP ≤ 10 ms
IC
100
mA
Total power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter
and detector, refer to climate
DIN 40046, part 2, Nov. 74
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter
and detector Comparative tracking
index per DIN IEC 112/VDE 0303, part 1
CTI
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Soldering temperature (2)
max. 10 s, dip soldering distance
to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
13
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Thermal resistance
Rthja
500
K/W


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