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SIE800DF Datasheet(PDF) 4 Page - Vishay Siliconix

Part # SIE800DF
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE800DF Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 73199
S-60784-Rev. D, 08-May-06
Vishay Siliconix
SiE800DF
TYPICAL CHARACTERISTICS 25 °C, unless noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0
1.2
1
10
60
0.00
0.2
0.4
0.6
0.8
TJ = 25 °C
TJ = 150 °C
VSD – Source-to-Drain Voltage (V)
1.0
1.4
1.8
2.2
2.6
3.0
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ – Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0246
8
10
ID = 10.8 A
VGS – Gate-to-Source Voltage (V)
TA = 25 °C
TA = 125 °C
0.012
0.008
0.004
0.016
0.020
0
30
50
10
20
Time (sec)
40
10
1000
1
0.1
0.01
100
Safe Operating Area, Junction-to-Ambient
*Limited
by rDS(on)
100
1
0.1
1
10
100
0.01
0.1
1 ms
10 ms
100 ms
dc
VDS – Drain-to-Source Voltage (V)
*VGS
minimum VGS at which rDS(on) is specified
1 s
10 s
TA = 25 °C
Single Pulse
10


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