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SIE800DF Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIE800DF Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73199 S-60784-Rev. D, 08-May-06 Vishay Siliconix SiE800DF TYPICAL CHARACTERISTICS 25 °C, unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD – Source-to-Drain Voltage (V) 1.0 1.4 1.8 2.2 2.6 3.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0246 8 10 ID = 10.8 A VGS – Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0.012 0.008 0.004 0.016 0.020 0 30 50 10 20 Time (sec) 40 10 1000 1 0.1 0.01 100 Safe Operating Area, Junction-to-Ambient *Limited by rDS(on) 100 1 0.1 1 10 100 0.01 0.1 1 ms 10 ms 100 ms dc VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified 1 s 10 s TA = 25 °C Single Pulse 10 |
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