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MSC82302 Datasheet(PDF) 1 Page - STMicroelectronics |
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MSC82302 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page PRELIMINARY DATA October 1992 GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS .250 2LFL (S010) hermetically sealed . REFRACTORY/GOLD METALLIZATION . VSWR CAPABILITY 20:1 @ RATED CONDITIONS . HERMETIC STRIPAC® PACKAGE . POUT = 1.8 W MIN. WITH 10.0 dB GAIN DESCRIPTION The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Am- plifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. PIN CONNECTION BRANDI NG 82302 ORDER CODE MSC82302 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 50°C) 6.0 W IC Device Current* 300 mA VCC Collector-Supply Voltage* 26 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation MSC82302 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/4 |
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