September 2, 1994

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.280 2LFL (S068)

epoxy sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

DESCRIPTION

The MSC81035M is a medium power Class C

transistor designed specifically for pulsed L-Band

avionics applications. This device is a direct re-

placement for the MSC1035M. MSC81035M of-

fers improved saturated ouput power and collec-

tor efficiency based on the test circuit described

herein.

Low RF thermal resistance and computerized au-

tomatic wire bonding techniques ensure high reli-

ability and product consistency.

The MSC81035M is housed in the IMPAC

™

package with internal input matching.

PIN CONNECTION

BRANDING

81035M

ORDER CODE

MSC81035M

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 100°C)

150

W

Device Current*

3.0

A

Collector-Supply Voltage*

55

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

1.0

°C/W

*Applies only to rated RF amplifier operation

Note:

Thermal Resistance determined by Infra-Red Scanning of Hot-Spot

Junction Temperature at rated RF operating conditions.

MSC81035M

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/4