MJD3055 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	MJD3055

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEX

Collect or Cut-off

Current

VCB =70 V VBE = -1. 5V

VCB =70 V VBE = -1.5V Tj = 150

oC

0.2

2

µA

ICBO

Collect or Cut-off

Current (IE =0)

VCB =70 V

Tj =150

oC

0.2

2

µA

ICEO

Collect or Cut-off

Current (IB =0)

VCB =30 V

50

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

0.5

mA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

IC =30 mA

60

V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =4 A

IB = 0.4 A

IC =10 A

IB =3.3 A

1.1

8

V

VBE(on)

∗ Base-Emitter Voltage

IC =4 A

VCE =4 V

1.8

V

hFE

∗

DC Current G ain

IC =4 A

VCE =4 V

IC =10 A

VCE =4 V

20

5

100

fT

DC Current G ain

IC =0. 5 A

VCE = 10 V f = 500 KHz

2

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curves

MJD2955 / MJD3055

2/6

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