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MJD3055 Datasheet(PDF) 2 Page - STMicroelectronics |
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MJD3055 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-ca se Rthj- amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICEX Collect or Cut-off Current VCB =70 V VBE = -1. 5V VCB =70 V VBE = -1.5V Tj = 150 oC 0.2 2 µA µA ICBO Collect or Cut-off Current (IE =0) VCB =70 V VCB =70 V Tj =150 oC 0.2 2 µA µA ICEO Collect or Cut-off Current (IB =0) VCB =30 V 50 µA IEBO Emitt er Cut-off Current (IC =0) VEB =5 V 0.5 mA VCEO(sus) Collect or-Emitter Sustaining Voltage IC =30 mA 60 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =4 A IB = 0.4 A IC =10 A IB =3.3 A 1.1 8 V VBE(on) ∗ Base-Emitter Voltage IC =4 A VCE =4 V 1.8 V hFE ∗ DC Current G ain IC =4 A VCE =4 V IC =10 A VCE =4 V 20 5 100 fT DC Current G ain IC =0. 5 A VCE = 10 V f = 500 KHz 2 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curves MJD2955 / MJD3055 2/6 |
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Similar Description - MJD3055 |
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