V29C51000B-90J datasheet(9/16 Pages) MOSEL

Part #	V29C51000B-90J

Description	512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	MOSEL [Mosel Vitelic, Corp]

Direct Link	http://www.moselvitelic.com

Logo

9 / 16 page

9

V29C51000T/V29C51000B Rev. 0.5 October 2000

MOSEL VITELIC

V29C51000T/V29C51000B

Functional Description

The V29C51000T/V29C51000B consists of 256

equally-sized sectors of 512 bytes each. The 8 KB

lockable Boot Block is intended for storage of the

system BIOS boot code. The boot code is the first

piece of code executed each time the system is

powered on or rebooted.

The V29C51000 is available in two versions: the

V29C51000T with the Boot Block address starting

from E000H to FFFFH, and the V29C51000B with

the Boot Block address starting from 0000H to

FFFFH.

Read Cycle

A read cycle is performed by holding both CE

and OE signals LOW. Data Out becomes valid only

when these conditions are met. During a read cycle

WE must be HIGH prior to CE and OE going LOW.

WE must remain HIGH during the read operation

for the read to complete (see Table 1).

Output Disable

Returning OE or CE HIGH, whichever occurs first

will terminate the read operation and place the l/O

pins in the HIGH-Z state.

Standby

The device will enter standby mode when the CE

signal is HIGH. The l/O pins are placed in the

HIGH-Z, independent of the OE signal.

Command Sequence

The V29C51000T/V29C51000B does not

provide the “reset” feature to return the chip to its

normal state when an incomplete command

sequence or an interruption has happened. In this

case, normal operation (Read Mode) can be

restored by issuing a “non-existent” command

sequence, for example Address: 5555H, Data FFH.

Byte Program Cycle

The V29C51000T/V29C51000B is programmed

on a byte-by-byte basis. The byte program

operation is initiated by using a specific four-bus-

cycle sequence: two unlock program cycles, a

program setup command and program data

program cycles (see Table 2).

During the byte program cycle, addresses are

latched on the falling edge of either CE or WE,

whichever is last. Data is latched on the rising edge

of CE or WE, whichever is first. The byte program

cycle can be CE controlled or WE controlled.

Sector Erase Cycle

The V29C51000T/V29C51000B features a

sector erase operation which allows each sector to

be erased and reprogrammed without affecting

data stored in other sectors. Sector erase operation

is initiated by using a specific six-bus-cycle

sequence: Two unlock program cycles, a setup

command, two additional unlock program cycles,

and the sector erase command (see Table 2). A

sector must be first erased before it can be

reprogrammed. While in the internal erase mode,

8KB Boot Block

512

8KB Boot Block

V29C51000T

V29C51000B

FFFFH

E000H

0000H

1FFFH

51000-13

0000H

8KB Boot Block = 16 Sectors

Table 1. Operation Modes Decoding

NOTES:

1.

X = Don’t Care, VIH = HIGH, VIL = LOW.

2.

PD: The data at the byte address to be programmed.

Decoding Mode

CE

OE

WE

A0

A1

A9

I/O

Read

VIL

VIH

A0

A1

A9

READ

Program

VIL

VIH

VIL

A0

A1

A9

PD

Standby

VIH

XXXXX

HIGH-Z

Autoselect Device ID

VIL

VIH

VIL

VH

CODE

Autoselect Manufacture ID

VIL

VIH

VIL

VH

CODE

Output Disable

VIL

VIH

X

HIGH-Z

Similar Part No. - V29C51000B-90J

Manufacturer	Part #	Datasheet	Description
Mosel Vitelic, Corp	V29C51001B	74Kb / 16P	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
	V29C51001B-45J	74Kb / 16P	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
	V29C51001B-45P	74Kb / 16P	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
	V29C51001B-45T	74Kb / 16P	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
	V29C51001B-70J	74Kb / 16P	1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

More results

Similar Description - V29C51000B-90J

Manufacturer	Part #	Datasheet	Description
Mosel Vitelic, Corp	V29LC51000	52Kb / 12P	512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
Fujitsu Component Limit...	MBM29F040A-12	715Kb / 18P	FLASH MEMORY CMOS 4M 512K X 8 BIT
Toshiba Semiconductor	TC58FVT004	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY
Macronix International	MX28F4100	175Kb / 2P	4M-BIT (512K X 8) CMOS FLASH MEMORY
List of Unclassifed Man...	F29C51001	143Kb / 16P	1MEGABIT(131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
ATMEL Corporation	AT29C512	692Kb / 12P	512K 64K x 8 5-volt Only CMOS Flash Memory
AMIC Technology	A29L040A	405Kb / 30P	512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory
	A29L040	303Kb / 32P	512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory
	A29L004	370Kb / 39P	512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
Eon Silicon Solution In...	EN29LV800	239Kb / 43P	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

More results

V29C51000B-90J Datasheet(PDF) 9 Page - Mosel Vitelic, Corp

V29C51000B-90J Datasheet(HTML) 9 Page - Mosel Vitelic, Corp

Similar Part No. - V29C51000B-90J

Similar Description - V29C51000B-90J

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL