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M58LW032D90ZA1F Datasheet(PDF) 11 Page - STMicroelectronics |
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M58LW032D90ZA1F Datasheet(HTML) 11 Page - STMicroelectronics |
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11 / 51 page  11/51 M58LW032D sistor. The use of an open-drain output allows the STS pins from several memories to be connected to a single pull-up resistor (a Low will indicate that one, or more, of the memories is busy). STS is not Low during a reset unless the reset was applied when the Program/Erase controller was active. Program/Erase Enable (VPEN). The Program/ Erase Enable input, VPEN, is used to protect all blocks, preventing Program and Erase operations from affecting their data. Program/Erase Enable must be kept High during all Program/Erase Controller operations, other- wise the operations is not guaranteed to succeed and data may become corrupt. VDD Supply Voltage. VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program and Erase). VDDQ Supply Voltage. VDDQ provides the power supply to the I/O pins and enables all Outputs to be powered independently from VDD. VDDQ can be tied to VDD or can use a separate supply. It is recommended to power-up and power-down VDD and VDDQ together to avoid any condition that would result in data corruption. VSS Ground. Ground, VSS, is the reference for the core power supply. It must be connected to the system ground. VSSQ Ground. VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be connected to VSS. Note: Each device in a system should have VDD and VDDQ decoupled with a 0.1µF ceramic capacitor close to the pin (high frequency, in- herently low inductance capacitors should be as close as possible to the package). See Fig- ure 8, AC Measurement Load Circuit. Table 2. Device Enable Note: For single device operations, E2 and E1 can be connected to VSS. E2 E1 E0 Device VIL VIL VIL Enabled VIL VIL VIH Disabled VIL VIH VIL Disabled VIL VIH VIH Disabled VIH VIL VIL Enabled VIH VIL VIH Enabled VIH VIH VIL Enabled VIH VIH VIH Disabled |
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