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C67070-A2506-A67 Datasheet(PDF) 1 Page - eupec GmbH |
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C67070-A2506-A67 Datasheet(HTML) 1 Page - eupec GmbH |
1 / 10 page 1 Oct-20-1997 BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67 BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 35 50 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 70 100 Power dissipation per IGBT TC = 25 °C Ptot 280 W Chip temperature Tj + 150 °C Storage temperature Tstg -40 ... + 125 Thermal resistance, chip case RthJC ≤ 0.44 K/W Diode thermal resistance, chip case RthJCD ≤ 0.8 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 |
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