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PRODUCT PREVIEW

October 1999

This is preliminary information on a new product now in development. Details are subject to change without notice.

M59DR008E

M59DR008F

8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory

s

SUPPLY VOLTAGE

Erase and Read

Program and Erase

s

ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

– Page Access: 35ns

– Random Access: 100ns

s

PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

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MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 4 Mbit

– Parameter Blocks (Top or Bottom location)

– Main Blocks

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DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

s

BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

– Any combination of Blocks can be protected

–WP for Block Locking

s

COMMON FLASH INTERFACE (CFI)

s

64 bit SECURITY CODE

s

ERASE SUSPEND and RESUME MODES

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M59DR008E: A2h

– Device Code, M59DR008F: A3h

BGA

TSOP48 (N)

12 x 20mm

FBGA48 (ZB)

8 x 6 solder balls

Figure 1. Logic Diagram

AI03212

19

A0-A18

W

DQ0-DQ15

VDD

M59DR008E

M59DR008F

E

VSS

16

G

RP

WP

VDDQ VPP