M58LW032C90N1T datasheet(6/61 Pages) STMICROELECTRONICS

Part #	M58LW032C90N1T

Description	32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M58LW032C

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SUMMARY DESCRIPTION

M58LW032C is a 32 Mbit (2Mb x16) non-volatile

memory that can be read, erased and repro-

grammed. These operations can be performed us-

ing a single low voltage (2.7V to 3.6V) core supply.

On power-up the memory defaults to Read mode

with an asynchronous bus where it can be read in

the same way as a non-burst Flash memory.

The memory is divided into 32 blocks of 1Mbit that

can be erased independently so it is possible to

preserve valid data while old data is erased. Pro-

gram and Erase commands are written to the

Command Interface of the memory. An on-chip

Program/Erase Controller simplifies the process of

programming or erasing the memory by taking

care of all of the special operations that are re-

quired to update the memory contents. The end of

a Program or Erase operation can be detected and

any error conditions identified in the Status Regis-

ter. The command set required to control the

memory is consistent with JEDEC standards.

The device supports synchronous burst read and

asynchronous read from all blocks of the memory

array; at power-up the device is configured for

asynchronous read. In asynchronous mode an

Address Latch input can be used to latch address-

es in Latch Controlled mode. In synchronous burst

mode, data is output on each clock cycle at fre-

quencies of up to 56MHz.

The Write Buffer allows the microprocessor to pro-

gram from 1 to 16 Words in parallel, both speeding

up the programming and freeing up the micropro-

cessor to perform other work. A Word Program

command is available to program a single Word.

Erase can be suspended in order to perform either

Read or Program in any other block and then re-

sumed. Program can be suspended to Read data

in any other block and then resumed. Each block

can be programmed and erased over 100,000 cy-

cles.

The M58LW032C has several security features to

increase data protection.

s

Block Protection, where each block can be

individually protected against program or erase

operations. All blocks are protected during

power-up. The protection of the blocks is non-

volatile; after power-up the protection status of

each block is restored to the state when power

was last removed.

s

Program Erase Enable input VPEN, program or

erase operations are not possible when the

Program Erase Enable input VPEN is low.

s

Smart Protection, which allows protected blocks

to be permanently locked. This feature is not

described in the datasheet for security reasons.

Please contact STMicroelectronics for further

details.

s

128 bit Protection Register, divided into two 64

bit segments: the first contains a unique device

number written by ST, the second is user

programmable.

The

user

programmable

segment can be protected.

The Reset/Power-Down pin is used to apply a

Hardware Reset to the memory and to set the de-

vice in power-down mode.

The device features an Auto Low Power mode. If

the bus becomes inactive during Asynchronous

Read operations, the device automatically enters

Auto Low Power mode. In this mode the power

consumption is reduced to the Auto Low Power

supply current.

The STS signal is an open drain output that can be

used to identify the Program/Erase Controller sta-

tus. It can be configured in two modes: Ready/

Busy mode where a static signal indicates the sta-

tus of the P/E.C, and Status mode where a pulsing

signal indicates the end of a Program or Block

Erase operation. In Status mode it can be used as

a system interrupt signal, useful for saving CPU

time.

The memory is available in TSOP56 (14 x 20 mm)

and TBGA64 (10 x 13mm, 1mm pitch) packages.

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