M59BW102 datasheet(11/24 Pages) STMICROELECTRONICS

Part #	M59BW102

Description	1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

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M59BW102

Table 13. Random Read Mode AC Characteristics

(TA = 0 to 70°C)

Note: 1. This timing refers to a Load Capacitance (CL) of 30pF. If CL is higher, add 1ns for each extra 10pF.

Symbol

Alt

Parameter

Test Condition

M59BW102

Unit

25

VCC = 3.0V to 3.6V

Min

Typ

Max

tALHALL

tALW

Address Latch Enable High to Address

Latch Enable Low

ALE = Pulse

10

ns

tELALL

tE

Chip Enable Low to Address Latch Enable

Low

10

ns

tAXALL

tAS

Address Transition to Address Latch

Enable Low

6ns

tEHALH

tELV

Chip Enable High to Address Latch Enable

High

3ns

tALLGL

tAG

Address Latch Enable Low to Output

Enable Low

7.5

ns

tGHALH

tQP

Output Enable High to Address Latch

Enable High

0ns

tGHGL

tGW

Output Enable High to Output Enable Low

G = Pulse

14

ns

tGLGH

tGL

Output Enable Low to Output Enable High

48

ns

tGLQV

(1)

tGACC

Output Enable Low to Output Valid

30

ns

tELQV

(1)

tEACC

Chip Enable Low to Output Valid

55

ns

tGHEL

tGE

Output Enable High to Chip Enable Low

–2

ns

tEHQZ

tEDF

Chip Enable High to Output Hi-Z

12

ns

tALHQZ

tADF

Address Latch Enable High to Output Hi-Z

20

ns

tQVGH

tQV

Output Valid to Output Enable High

10

ns

tGHEH

tGE

Output Enable High to Chip Enable High

0

ns

tELGL

tEGL

Chip Enable Low to Output Enable Low

13

ns

tEHQV

Chip Enable High to Data Hold

0

ns

tALLAX

Address Latch Enable Low to Address

Transition

30

ns

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