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STD253GK16 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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STD253GK16 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches mA IDRM 40 V VT, VF IT, IF=750A; TVJ=25 oC 1.7 VTO For power-loss calculations only (TVJ=140 oC) 0.85 V rT 1.1 m VD=6V; TVJ=25 oC TVJ=-40 oC VGT 2 3 V VD=6V; TVJ=25 oC TVJ=-40 oC IGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD 10 mA IH TVJ=25 oC; VD=6V; RGK= 150 mA TVJ=25 oC; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 300 mA IL per thyristor/diode; DC current per module RthJC 0.129 0.0645 K/W per thyristor/diode; DC current per module RthJK 0.169 0.0845 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 TVJ=25 oC; VD=1/2VDRM IG=1A; diG/dt=1A/us tgd 2 us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=50V/us; VD=2/3VDRM tq 200 us uC QS TVJ=125 oC; IT, IF=400A; -di/dt=50A/us 760 IRM 275 A * Copper base plate FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ |
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Similar Description - STD253GK16 |
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