M58CR064D datasheet(6/70 Pages) STMICROELECTRONICS

Part #	M58CR064D

Description	64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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M58CR064C, M58CR064D, M58CR064P, M58CR064Q

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SUMMARY DESCRIPTION

The M58CR064 is a 64 Mbit (4Mbit x16) non-vola-

tile Flash memory that may be erased electrically

at block level and programmed in-system on a

Word-by-Word basis using a 1.65V to 2V VDD sup-

ply for the circuitry and a 1.65V to 3.3V VDDQ sup-

ply for the Input/Output pins. An optional 12V VPP

power supply is provided to speed up customer

programming. In M58CR064C and M58CR064D

the VPP pin can also be used as a control pin to

provide absolute protection against program or

erase. In M58CR064P and M58CR064Q this fea-

ture is disabled.

The device features an asymmetrical block archi-

tecture. M58CR064 has an array of 135 blocks,

and is divided into two banks, Banks A and B. The

Dual Bank Architecture allows Dual Operations,

while programming or erasing in one bank, Read

operations are possible in the other bank. Only

one bank at a time is allowed to be in Program or

Erase mode. It is possible to perform burst reads

that cross bank boundaries. The bank architecture

is summarized in Table 2, and the memory maps

are shown in Figure 4. The Parameter Blocks are

located at the top of the memory address space for

the M58CR064C and M58CR064P, and at the bot-

tom for the M58CR064D and M58CR064Q.

Each block can be erased separately. Erase can

be suspended, in order to perform program in any

other block, and then resumed. Program can be

suspended to read data in any other block and

then resumed. Each block can be programmed

and erased over 100,000 cycles using the supply

voltage VDD.

Program and Erase commands are written to the

Command Interface of the memory. An internal

Program/Erase Controller takes care of the tim-

ings necessary for program and erase operations.

The end of a program or erase operation can be

detected and any error conditions identified in the

Status Register. The command set required to

control the memory is consistent with JEDEC stan-

dards.

The device supports synchronous burst read and

asynchronous read from all blocks of the memory

array; at power-up the device is configured for

asynchronous read. In synchronous burst mode,

data is output on each clock cycle at frequencies

of up to 54MHz.

The M58CR064 features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency, enabling in-

stant code and data protection. All blocks have

three levels of protection. They can be locked and

locked-down individually preventing any acciden-

tal programming or erasure. In M58CR064C and

M58CR064D there is an additional hardware pro-

tection against program and erase. When VPP ≤

VPPLK all blocks are protected against program or

erase. All blocks are locked at Power- Up.

The device includes a Protection Register and a

Security Block to increase the protection of a sys-

tem’s design. The Protection Register is divided

into two segments: a 64 bit segment containing a

unique device number written by ST, and a 128 bit

segment One-Time-Programmable (OTP) by the

user. The user programmable segment can be

permanently protected. The Security Block, pa-

rameter block 0, can be permanently protected by

the user. Figure 5, shows the Security Block and

Protection Register Memory Map.

The memory is offered in a TFBGA56, 6.5 x

10mm, 0.75 mm ball pitch package and is supplied

with all the bits erased (set to ’1’).

Similar Part No. - M58CR064D

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M58CR032C	435Kb / 63P	32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
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Similar Description - M58CR064D

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M58WR064ET	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
	M58WR064T	497Kb / 81P	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
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STMicroelectronics	M58CR032C	435Kb / 63P	32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
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