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PRELIMINARY DATA

February 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M58BF008

8 Mbit (256Kb x32, Burst) Flash Memory

s

SUPPLY VOLTAGE

s

CONFIGURABLE OPTIONS

– Synchronous or Asynchronous write mode

– Burst Wrap/No-wrap default

– Critical Word X (3 or 4) and Burst Word

Y (1 or 2) latency times

s

ACCESS TIME

– Synchronous X-Y-Y-Y Burst Read

up to 40MHz

– Asynchronous Read: 100ns

s

PROGRAMMING TIME: 10

µs typical

s

MEMORY BLOCKS

– 32 equal Main blocks of 256 Kbit

– One Overlay block of 256 Kbit

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F0h

– Version Code: 0-7h

DESCRIPTION

The M58BF008 is a family of 8 Mbit non-volatile

Flash memories that can be erased electrically at

the block level and programmed in-system. Family

members are configured during product testing for

a specific Synchronous or Asynchronous Write

mode, a Burst default of Wrap or No-wrap and for

Critical Word X = 3 or 4 and Burst Word Y = 1 or 2

latency times. The Main memory array matrix al-

lows each of the 32 equal blocks of 256 Kbit to be

erased separately and re-programmed without af-

fecting other blocks. The memory features a

256 Kbit Overlay block having the same address

space as the first Main memory block. The Overlay

block provides a secure storage area that is con-

trolled by special Instructions and an external in-

Output signals to be at 3.3V levels, while the main

Figure 1. Logic Diagram

18

A17-A0

CLK

DQ31-DQ0

VDD

E

VSS

32

LBA

WR

VDDQ VPP

W

G

GD

BAA

RP

AI02656B

VSSQ

M58BF008

BGA

LBGA80 (ZA)

10 x 8 solder balls

PQFP80 (D)