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M58BF008B100D6T Datasheet(PDF) 1 Page - STMicroelectronics |
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M58BF008B100D6T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 36 page 1/36 PRELIMINARY DATA February 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M58BF008 8 Mbit (256Kb x32, Burst) Flash Memory s SUPPLY VOLTAGE –VDD = 5V Supply Voltage –VDDQ = 3.3V Input/Output Supply Voltage – Optional VPP = 12V for fast Program and Erase s CONFIGURABLE OPTIONS – Synchronous or Asynchronous write mode – Burst Wrap/No-wrap default – Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times s ACCESS TIME – Synchronous X-Y-Y-Y Burst Read up to 40MHz – Asynchronous Read: 100ns s PROGRAMMING TIME: 10 µs typical s MEMORY BLOCKS – 32 equal Main blocks of 256 Kbit – One Overlay block of 256 Kbit s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F0h – Version Code: 0-7h DESCRIPTION The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The Main memory array matrix al- lows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without af- fecting other blocks. The memory features a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is con- trolled by special Instructions and an external in- put. A separate supply VDDQ allows the Input/ Output signals to be at 3.3V levels, while the main supply VDD is 5V. Figure 1. Logic Diagram 18 A17-A0 CLK DQ31-DQ0 VDD E VSS 32 LBA WR VDDQ VPP W G GD BAA RP AI02656B VSSQ M58BF008 BGA LBGA80 (ZA) 10 x 8 solder balls PQFP80 (D) |
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