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SG23N06T Datasheet(PDF) 2 Page - Sirectifier Semiconductors

Part # SG23N06T
Description  Discrete IGBTs
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Manufacturer  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

SG23N06T Datasheet(HTML) 2 Page - Sirectifier Semiconductors

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SG23N06T, SG23N06DT
Discrete IGBTs
Symbol
Test Conditions
Unit
min.
typ.
max.
gts
IC=IC90; VCE=10V
9
17
S
Pulse test, t
300us, duty cycle
2%
Cies
1500
Coes
VCE=25V; VGE=0V; f=1MHz
120
pF
Cres
40
Qg
55
Qge
IC=IC90; VGE=15V; VCE=0.5VCES
13
nC
Qgc
17
td(on)
Inductive load, TJ=25
oC
15
ns
tri
IC=IC90; VGE=15V; L=100uH
25
ns
VCE=0.8VCES; RG=Roff=10
td(off)
Remarks:Switching times may increase
75
140
ns
tfi
for VCE(Clamp)
0.8VCES' higher TJ or
60
110
ns
Eoff
increased RG
0.24
0.36
mJ
td(on)
Inductive load, TJ=125
oC
15
ns
tri
IC=IC90; VGE=15V; L=100uH
25
ns
Eon
VCE=0.8VCES; RG=Roff=10
0.15
mJ
td(off)
Remarks:Switching times may increase
130
ns
tfi
for VCE(Clamp)
0.8VCES' higher TJ or
110
ns
Eoff
increased RG
0.6
mJ
RthJC
0.83
K/W
RthCK
0.25
K/W
(TJ=25
oC, unless otherwise specified)
Characteristic Values
Reverse Diode (FRED)
Symbol
Test Conditions
Unit
min.
typ.
max.
VF
IF=IC90; VGE=0V;TJ=150
oC
1.6
V
TJ=25
oC
2.5
IRM
IF=IC90; VGE=0V; -diF/dt=100A/us
VR=100V; TJ=100
oC
6
100
A
trr
IF=1A; -di/dt=100A/us; VR=30V; TJ=25
oC
25
ns
RthJC
0.9
K/W
Characteristic Values
(TJ=25
oC, unless otherwise specified)
Pulse test, t
300us, duty cycle
2%;
ns


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