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SG23N06T Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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SG23N06T Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 2 page SG23N06T, SG23N06DT Discrete IGBTs Symbol Test Conditions Unit min. typ. max. gts IC=IC90; VCE=10V 9 17 S Pulse test, t 300us, duty cycle 2% Cies 1500 Coes VCE=25V; VGE=0V; f=1MHz 120 pF Cres 40 Qg 55 Qge IC=IC90; VGE=15V; VCE=0.5VCES 13 nC Qgc 17 td(on) Inductive load, TJ=25 oC 15 ns tri IC=IC90; VGE=15V; L=100uH 25 ns VCE=0.8VCES; RG=Roff=10 td(off) Remarks:Switching times may increase 75 140 ns tfi for VCE(Clamp) 0.8VCES' higher TJ or 60 110 ns Eoff increased RG 0.24 0.36 mJ td(on) Inductive load, TJ=125 oC 15 ns tri IC=IC90; VGE=15V; L=100uH 25 ns Eon VCE=0.8VCES; RG=Roff=10 0.15 mJ td(off) Remarks:Switching times may increase 130 ns tfi for VCE(Clamp) 0.8VCES' higher TJ or 110 ns Eoff increased RG 0.6 mJ RthJC 0.83 K/W RthCK 0.25 K/W (TJ=25 oC, unless otherwise specified) Characteristic Values Reverse Diode (FRED) Symbol Test Conditions Unit min. typ. max. VF IF=IC90; VGE=0V;TJ=150 oC 1.6 V TJ=25 oC 2.5 IRM IF=IC90; VGE=0V; -diF/dt=100A/us VR=100V; TJ=100 oC 6 100 A trr IF=1A; -di/dt=100A/us; VR=30V; TJ=25 oC 25 ns RthJC 0.9 K/W Characteristic Values (TJ=25 oC, unless otherwise specified) Pulse test, t 300us, duty cycle 2%; ns |
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