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SUR30100PT Datasheet(PDF) 3 Page - Sirectifier Semiconductors |
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SUR30100PT Datasheet(HTML) 3 Page - Sirectifier Semiconductors |
3 / 3 page SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes Fig. 1 Forward current Fig. 2 Recovery charge versus -di F/dt. Fig. 3 Peak reverse current versus versus voltage drop. -di F/dt. 0 100 200 300 400 0 10 20 30 40 50 60 T VJ=125°C di F/dt t fr V FR t fr ns 0 200 400 600 800 1000 1200 V V FR 0 100 200 300 400 0.0 0.2 0.4 0.6 0.8 1.0 I F=5.5A I F=11A I F=22A I F=11A V R=540V T VJ=100°C -di F/dt µs t rr typ. max. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 K f Q R I RM °C T J 0 100 200 300 400 0 5 10 15 20 25 30 I F=5.5A I F=11A I F=22A I F=11A T VJ=100°C A max. typ. V R=540V 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A/µs -di F/dt I RM -di F/dt µC Q r typ. max. V R= 540V 0 1 2 3 4 0 5 10 15 20 25 30 T VJ=100°C V V F I F T VJ=150°C T VJ=100°C T VJ=25°C A I F=11A I F=22A I F=11A I F=5.5A I F=11A A/µs A/µs A/µs Fig. 7 Transient thermal impedance junction to case. Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di F/dt. Fig. 6 Peak forward voltage junction temperature. versus di F/dt. |
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