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S29NS032J0LBJW002 Datasheet(PDF) 4 Page - SPANSION

Part # S29NS032J0LBJW002
Description  Burst Mode Flash Memories
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

S29NS032J0LBJW002 Datasheet(HTML) 4 Page - SPANSION

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S29NS-J
S29NS-J_00_A11 February 7, 2007
Da ta
Sh e e t
The devices operate within the temperature range of –25
°C to +85 °C, and are offered Very Thin FBGA
packages.
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture divides the memory space into four banks. The device allows a
host system to program or erase in one bank, then immediately and simultaneously read from another bank,
with zero latency. This releases the system from waiting for the completion of program or erase operations.
The devices are structured as shown in the following tables:
The devices use Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to
control asynchronous read and write operations. For burst operations, the devices additionally require Ready
(RDY) and Clock (CLK). This implementation allows easy interface with minimal glue logic to
microprocessors/microcontrollers for high performance read operations.
The devices offer complete compatibility with the JEDEC 42.4 single-power-supply Flash command set
standard. Commands are written to the command register using standard microprocessor write timings.
Reading data out of the device are similar to reading from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status bit
DQ7 (Data# Polling). After a program or erase cycle has been completed, the device automatically returns to
reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The devices are fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The devices also offer three types of data protection at the sector level. The sector
S29NS128J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
48 Kwords
64
32 Kwords
63
32 Kwords
32 Mbits total
96 Mbits total
S29NS064J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
48 Kwords
32
32 Kwords
31
32 Kwords
16 Mbits total
48 Mbits total
S29NS032J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
48 Kwords
16
32 Kwords
15
32 Kwords
8 Mbits total
24 Mbits total
S29NS016J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
48 Kwords
8
32 Kwords
7
32 Kwords
4 Mbits total
12 Mbits total


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