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IRGIB10B60KD1PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGIB10B60KD1PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRGIB10B60KD1PbF 2 www.irf.com Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 50Ω. Energy losses include "tail" and diode reverse recovery. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.99 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) 1.50 1.70 2.10 IC = 10A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Voltage — 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150°C — 2.06 2.35 IC = 10A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) gfe Forward Transconductance — 5.0 — S VCE = 50V, IC = 10A, PW = 80µs —1.0 150 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current — 90 250 µA VGE = 0V, VCE = 600V, TJ = 150°C — 150 400 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.80 2.40 V IF = 5.0A, VGE = 0V — 1.32 1.74 IF = 5.0A, VGE = 0V, TJ = 150°C — 1.23 1.62 IF = 5.0A, VGE = 0V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 41 62 IC = 10A Qge Gate-to-Emitter Charge (turn-on) — 4.6 6.9 nC VCC = 400V Qgc Gate-to-Collector Charge (turn-on) — 19 29 VGE = 15V Eon Turn-On Switching Loss — 156 264 IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss — 165 273 µJ VGE = 15V, RG = 50Ω, L = 1.07mH Etot Total Switching Loss — 321 434 Ls= 150nH, TJ = 25°C d td(on) Turn-On delay time — 25 33 IC = 10A, VCC = 400V tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.1mH td(off) Turn-Off delay time — 180 250 Ls= 150nH, TJ = 25°C tf Fall time — 62 87 Eon Turn-On Switching Loss — 261 372 IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss — 313 425 µJ VGE = 15V, RG = 50Ω, L = 1.07mH Etot Total Switching Loss — 574 694 Ls= 150nH, TJ = 150°C d td(on) Turn-On delay time — 22 31 IC = 8.0A, VCC = 400V tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.07mH td(off) Turn-Off delay time — 240 340 Ls= 150nH, TJ = 150°C tf Fall time — 48 67 LE Internal Emitter Inductance — 7.5 — nH Measured 5 mm from package Cies Input Capacitance — 610 915 VGE = 0V Coes Output Capacitance — 66 99 pF VCC = 30V Cres Reverse Transfer Capacitance — 23 35 f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50Ω SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 50Ω VCC=360V,VGE = +15V to 0V ISC (PEAK) Peak Short Circuit Collector Current — 100 — A Erec Reverse Recovery Energy of the Diode — 99 128 µJ TJ = 150°C trr Diode Reverse Recovery Time — 79 103 ns VCC = 400V, IF = 10A, L = 1.07mH Irr Peak Reverse Recovery Current — 14 18 A VGE = 15V, RG = 50Ω Qrr Diode Reverse Recovery Charge — 553 719 nC di/dt = 500A/µs |
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