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M29F400 Datasheet(PDF) 1 Page - STMicroelectronics |
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M29F400 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 34 page AI01726B 18 A0-A17 W DQ0-DQ14 VCC M29F400T M29F400B E VSS 15 G RP DQ15A–1 BYTE RB Figure 1. Logic Diagram M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V ±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME –10 µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code, M29F400T: 00D5h – Device Code, M29F400B: 00D6h DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word- by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard program- mers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro- November 1999 1/34 This is information on a product stil l in production but not recommended fo r new designs. 44 1 SO44 (M) TSOP48 (N) 12 x 20 mm |
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