TC246CYM-B0

SOCS089 – MAY 2005

TEXAS

INSTRUMENTS

POST OFFICE BOX 655303 * DALLAS TEXAS 75265

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The image-sensing area of the TC246CYM is configured into 500 lines with 680 pixels in

each line. 20 pixels are reserved in each line for dark reference. The blooming protection

is based on an advanced lateral overflow drain concept that does not reduce NIR

response. The frame interline transfer from the image sensing area to the memory area is

implemented to minimize image smear. After charge is integrated and stored in the

memory it is available for readout in the next cycle. This is accomplished by using a

unique serial register design that includes special charge multiplication pixels.

The TC246CYM sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase

CCD (SGVPCCD) technology, which provides devices with wide spectral response, high

quantum efficiency (QE), low dark current, and high response uniformity.

This MOS device contains limited built-in protection. During storage or handling, the device leads

should be shorted together or the device should be placed in conductive foam. In a circuit, unused

inputs should always be connected to Vss. Under no circumstances should pin voltages exceed

absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent damage to the

amplifier. The device can also be damaged if the output and ADB terminals are reverse-biased and

excessive current is allowed to flow. Specific guidelines for handling devices of this type are

contained in the publication “Guidelines for Handling Electrostatic-Discharge-Sensitive (ESD)

Devices and Assemblies” available from Texas Instruments.