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M295V002NT-120N6TR Datasheet(PDF) 7 Page - STMicroelectronics |
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M295V002NT-120N6TR Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 29 page  Write. Write operations are used to give Instruction Commands to the memory or to latch input data to be programmed. A write operation is initiated when Chip Enable E is Low and Write Enable W is Low with Output Enable G High. Addresses are latched on the falling edge of W or E whichever occurs last. Commands and Input Data are latchedon the rising edge of W or E whichever occurs first. Output Disable. The data outputs are high imped- ance when the Output Enable G is High with Write Enable W High. Standby. The memory is in standby when Chip Enable E is High and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable G or Write Enable W inputs. Automatic Standby. After 150ns of bus inactivity and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumption is reduced to the CMOS standby value, while outputs still drive the bus. Electronic Signature. Two codes identifying the manufacturerand the device can be read from the memory. These codes allow programming equip- ment or applications to automatically match their interface to the characteristics of the M29F002. The Electronic Signature is output by a Read op- eration when the voltage applied to A9 is at VID and address input A1 is Low. The manufacturer code is output when the Address input A0 is Low and the device code when this input is High. Other Address inputs are ignored. The Electronic Signature can also be read, without raising A9 to VID, by giving the memory the Instruc- tion AS. Block Protection. Each block can be separately protected against Program or Erase on program- ming equipment. Block protection provides addi- tional data security, as it disables all program or erase operations. This mode is activated when both A9 and G are raised to VID and an address in the block is applied on A13-A17. The Block Protec- tion algorithm is shown in Figure 14. Block protec- tion is initiated on the edge of W falling to VIL. Then after a delay of 100 µs, the edge of W rising to VIH ends the protection operations. Block protection verify is achieved by bringing G, E, A0 and A6 to VIL and A1 to VIH, while W is at VIH and A9 at VID. Under these conditions, reading the dataoutput will yield 01h if the block defined by the inputs on A13-A17 is protected. Any attempt to program or erase a protected block will be ignored by the device. Block Temporary Unprotection. This feature is available on M29F002T and M29F002B only. Any previously protected block can be temporarily un- protected in order to change stored data. The temporaryunprotectionmode is activated by bring- ing RPNC to VID. During the temporary unprotec- tion mode the previously protected blocks are unprotected.A block can be selected and data can be modified by executing the Erase or Program instruction with the RPNC signal held at VID. When RPNC is returned to VIH, all the previously pro- tected blocks are again protected. Block Unprotection. All protected blocks can be unprotected on programming equipment to allow updating of bit contents. All blocks must first be protected before the unprotection operation. Block unprotection is activated when A9, G and E are at VID and A12, A15 at VIH. The Block Unprotection algorithm is shown in Figure 15. Unprotection is initiated by the edge of W falling to VIL. After a delay of 10ms, the unprotection operation is ended by rising W to VIH. Unprotection verify is achieved by bringing G and E to VIL while A0 is at VIL, A6 and A1 are at VIH and A9 remains at VID. In these conditions, reading the output data will yield 00h if the block defined by the inputs A13-A17 has been succesfullyunprotected.Each block must be sepa- rately verified by giving its address in order to ensure that it has been unprotected. INSTRUCTIONS AND COMMANDS The Command Interface latches commands writ- ten to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Pro- tection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences. Hex Code Command 00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase 90h Read Electronic Signature/ Block Protection Status A0h Program B0h Erase Suspend F0h Read Array/Reset Table 7. Commands 7/29 M29F002T, M29F002NT, M29F002B |
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