Part Name
         Description
HAT2092R

 Silicon N Channel Power MOS FET High Speed Power Switching ( 8 Page)


RENESAS
100% 
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HAT2092R
Rev.3.00 Jan. 13, 2005 page 5 of 7
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
D = 1
0.05
0.02
0.01
1shot
puls
e
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
DM
P
PW
T
D =
PW
T
ch - f(t) = s (t) x
ch - f
ch - f = 125
°C/W, Ta = 25°C
θ
γ
θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
DM
P
PW
T
D =
PW
T
ch - f(t) = s (t) x
ch - f
ch - f = 166
°C/W, Ta = 25°C
θ
γ
θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Source to Drain Voltage
VSD (V)
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
5 V
VGS = 0
10 V



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