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M295V002NT-70N6TR Datasheet(PDF) 1 Page - STMicroelectronics |
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M295V002NT-70N6TR Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 29 page  AI02078C 18 A0-A17 W DQ0-DQ7 VCC M29F002T M29F002B M29F002NT E VSS 8 G (*) RPNC Figure 1. Logic Diagram M29F002T, M29F002NT M29F002B 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10 µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code, M29F002T: B0h – Device Code, M29F002NT: B0h – Device Code, M29F002B: 34h DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 5V VCC supply.For Program and Erase operations the necessary high voltages are generated internally. The device can also be pro- grammed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles. July 1998 1/29 PLCC32 (K) 32 1 PDIP32 (P) TSOP32 (N) 8 x 20mm Note: * RPNC function is not available for the M29F002NT |
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