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FSDM0265RN Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSDM0265RN Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 20 page FSDH321, FSDL321 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 24mH, starting Tj = 25 °C Parameter Symbol Value Unit Maximum Vstr Pin Voltage VSTR,MAX 650 V Maximum Drain Pin Voltage VDRAIN,MAX 650 V Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-Source (GND) Voltage VGS ±20 V Drain Current Pulsed (1) IDM 1.5 ADC Continuous Drain Current (Tc=25 °C) ID 0.7 ADC Continuous Drain Current (Tc=100 °C) ID 0.32 ADC Single Pulsed Avalanche Energy (2) EAS 10 mJ Maximum Supply Voltage VCC,MAX 20 V Input Voltage Range VFB −0.3 to Vstop V Total Power Dissipation PD 1.25 W Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -25 to +85 °C Storage Temperature Range. TSTG -55 to +150 °C |
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