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M48Z58Y-70PC6TR Datasheet(PDF) 4 Page - STMicroelectronics |
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M48Z58Y-70PC6TR Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±5 µA ICC Supply Current Outputs open 50 mA ICC1 Supply Current (Standby) TTL E = VIH 3mA ICC2 Supply Current (Standby) CMOS E = VCC – 0.2V 3 mA VIL Input Low Voltage –0.3 0.8 V VIH Input High Voltage 2.2 VCC + 0.3 V VOL Output Low Voltage IOL = 2.1mA 0.4 V VOH Output High Voltage IOH = –1mA 2.4 V Table 6. DC Characteristics (TA = 0 to 70 °C or –40 to 85°C; VCC = 4.75V to 5.5V or 4.5V to 5.5V) Symbol Parameter Test Condition Min Max Unit CIN Input Capacitance VIN = 0V 10 pF CIO (3) Input / Output Capacitance VOUT = 0V 10 pF Notes: 1. Effective capacitance measured with power supply at 5V. 2. Sampled only, not 100% tested. 3. Outputs deselected. Table 5. Capacitance (1, 2) (TA = 25 °C) Symbol Parameter Min Typ Max Unit VPFD Power-fail Deselect Voltage (M48Z58/58Y) 4.5 4.6 4.75 V VPFD Power-fail Deselect Voltage (M48Z58/58YY) 4.2 4.35 4.5 V VSO Battery Back-up Switchover Voltage 3.0 V tDR (2) Expected Data Retention Time 10 YEARS Notes: 1. All voltages referenced to VSS. 2. At 25 °C Table 7. Power Down/Up Trip Points DC Characteristics (1) (TA = 0 to 70 °C or –40 to 85°C) For the 28 lead SOIC, the battery package (i.e. SNAPHAT) part number is "M4Z28-BR00SH1". The M48Z58/58Y also has its own Power-fail De- tect circuit. The control circuitry constantly monitors the single 5V supply for an out of tolerance condi- tion. When VCC is out of tolerance, the circuit write protects the SRAM, providing a high degree of data security in the midst of unpredictable system op- eration brought on by low VCC. As VCC falls below approximately 3V, the control circuitry connects the battery which maintains data until valid power re- turns. DESCRIPTION (cont’d) 4/17 M48Z58, M48Z58Y |
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