Symbol

Parameter

Test Condition

Min

Max

Unit

Input Leakage Current

0V

±1

µA

Output Leakage Current

0V

±5

µA

Supply Current

Outputs open

50

mA

Supply Current (Standby) TTL

3mA

Supply Current (Standby) CMOS

3

mA

Input Low Voltage

–0.3

0.8

V

Input High Voltage

2.2

V

Output Low Voltage

0.4

V

Output High Voltage

2.4

V

Table 6. DC Characteristics

Symbol

Parameter

Test Condition

Min

Max

Unit

Input Capacitance

10

pF

(3)

Input / Output Capacitance

10

pF

Notes: 1. Effective capacitance measured with power supply at 5V.

2. Sampled only, not 100% tested.

3. Outputs deselected.

°C)

Symbol

Parameter

Min

Typ

Max

Unit

Power-fail Deselect Voltage (M48Z58/58Y)

4.5

4.6

4.75

V

Power-fail Deselect Voltage (M48Z58/58YY)

4.2

4.35

4.5

V

Battery Back-up Switchover Voltage

3.0

V

(2)

Expected Data Retention Time

10

YEARS

2. At 25

°C

°C or –40 to 85°C)

For the 28 lead SOIC, the battery package (i.e.

SNAPHAT) part number is "M4Z28-BR00SH1".

The M48Z58/58Y also has its own Power-fail De-

tect circuit. The control circuitry constantly monitors

the single 5V supply for an out of tolerance condi-

protects the SRAM, providing a high degree of data

security in the midst of unpredictable system op-

approximately 3V, the control circuitry connects the

battery which maintains data until valid power re-

turns.

DESCRIPTION (cont’d)

4/17

M48Z58, M48Z58Y