 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
M50FW016N5TG Datasheet(PDF) 9 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
M50FW016N5TG Datasheet(HTML) 9 Page - STMicroelectronics |
|
|
9 / 45 page  9/45 M50FW016 WP, is set High, VIH, the protection of the Block determined by the Lock Register. The state of Write Protect, WP, does not affect the protection of the Top Block (Block 31). Write Protect, WP, must be set prior to a Program or Block Erase operation is initiated and must not be changed until the operation completes or un- predictable results may occur. Care should be tak- en to avoid unpredictable behavior by changing WP during Program or Erase Suspend. Reserved for Future Use (RFU). These pins do not have assigned functions in this revision of the part. They must be left disconnected. Address/Address Multiplexed (A/A Mux) Signal Descriptions For the Address/Address Multiplexed (A/A Mux) Interface see Figure 3., Logic Diagram (A/A Mux Interface), and Table 2., Signal Names (A/A Mux Interface). Address Inputs (A0-A10). The Address Inputs are used to set the Row Address bits (A0-A10) and the Column Address bits (A11-A20). They are latched during any bus operation by the Row/Col- umn Address Select input, RC. Data Inputs/Outputs (DQ0-DQ7). The Data In- puts/Outputs hold the data that is written to or read from the memory. They output the data stored at the selected address during a Bus Read opera- tion. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. The Data Inputs/Out- puts, DQ0-DQ7, are latched during a Bus Write operation. Output Enable (G). The Output Enable, G, con- trols the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory’s Com- mand Interface. Row/Column Address Select (RC). The Row/ Column Address Select input selects whether the Address Inputs should be latched into the Row Address bits (A0-A10) or the Column Address bits (A11-A20). The Row Address bits are latched on the falling edge of RC whereas the Column Address bits are latched on the rising edge. Ready/Busy Output (RB). The Ready/Busy pin gives the status of the memory’s Program/Erase Controller. When Ready/Busy is Low, VOL, the memory is busy with a Program or Erase operation and it will not accept any additional Program or Erase command except the Program/Erase Suspend command. When Ready/Busy is High, VOH, the memory is ready for any Read, Program or Erase operation. Supply Signal Descriptions The Supply Signals are the same for both interfac- es. VCC Supply Voltage. The VCC Supply Voltage supplies the power for all operations (Read, Pro- gram, Erase etc.). The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. After VCC becomes valid the Command Interface is reset to Read mode. A 0.1µF capacitor should be connected between the VCC Supply Voltage pins and the VSS Ground pin to decouple the current surges from the power supply. Both VCC Supply Voltage pins must be connected to the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations. VPP Optional Supply Voltage. The VPP Optional Supply Voltage pin is used to select the Fast Program (see the Quadruple Byte Program Command description) and Fast Erase options of the memory and to protect the memory. When VPP < VPPLK Program and Erase operations cannot be performed and an error is reported in the Status Register if an attempt to change the memory contents is made. When VPP = VCC Program and Erase operations take place as normal. When VPP = VPPH Fast Program operations (using the Quadruple Byte Program command, 30h, from Table 10.) and Fast Erase operations are used. Any other voltage input to VPP will result in undefined behavior and should not be used. VPP should not be set to VPPH for more than 80 hours during the life of the memory. VSS Ground. VSS is the reference for all the volt- age measurements. |
Similar Part No. - M50FW016N5TG |
|
Similar Description - M50FW016N5TG |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
