M48Z35AY, M48Z35AV

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Table 10. Write Mode AC Characteristics

2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.

Symbol

Parameter

M48Z35AY

M48Z35AV

Unit

-70

-100

Min

Max

Min

Max

Write Cycle Time

70

100

ns

Address Valid to Write Enable Low

0

0

ns

Address Valid to Chip Enable Low

0

0

ns

Write Enable Pulse Width

50

80

ns

Chip Enable Low to Chip Enable High

55

80

ns

Write Enable High to Address Transition

0

10

ns

Chip Enable High to Address Transition

0

10

ns

Input Valid to Write Enable High

30

50

ns

Input Valid to Chip Enable High

30

50

ns

Write Enable High to Input Transition

5

5

ns

Chip Enable High to Input Transition

5

5

ns

(1, 2)

Write Enable Low to Output Hi-Z

25

50

ns

Address Valid to Write Enable High

60

80

ns

Address Valid to Chip Enable High

60

80

ns

(1, 2)

Write Enable High to Output Transition

5

10

ns

DATA RETENTION MODE

erates as a conventional BYTEWIDE™ static

RAM. Should the supply voltage decay, the RAM

will automatically power-fail deselect, write pro-

pedance, and all inputs are treated as "don't care."

Note: A power failure during a write cycle may

corrupt data at the currently addressed location,

but does not jeopardize the rest of the RAM's con-

assured the memory will be in a write protected

The M48Z35AY/35AV may respond to transient

window during the time the device is sampling

lines is recommended.

switches power to the internal battery which pre-

serves data. The internal button cell will maintain

data in the M48Z35AY/35AV for an accumulated