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M28C64-A20WBS6T Datasheet(PDF) 5 Page - STMicroelectronics

Part # M28C64-A20WBS6T
Description  64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28C64-A20WBS6T Datasheet(HTML) 5 Page - STMicroelectronics

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M28C64
Read
The device is accessed like a static RAM. When E
and G are low, and W is high, the contents of the
addressed location are presented on the I/O pins.
Otherwise, when either G or E is high, the I/O pins
revert to their high impedance state.
Write
Write operations are initiated when both W and E
are low and G is high. The device supports both
W-controlled and E-controlled write cycles (as
shown in Figure 11 and Figure 12). The address is
latched during the falling edge of W or E (which
ever occurs later) and the data is latched on the
rising edge of W or E (which ever occurs first).
After a delay, tWLQ5H, that cannot be shorter than
the value specified in Table 10A to Table 10C, the
internal write cycle starts. It continues, under
internal timing control, until the write operation is
complete. The commencement of this period can
be detected by reading the Page Load Timer
Status on DQ5. The end of the cycle can be
detected by reading the status of the Data Polling
and the Toggle Bit functions on DQ7 and DQ6.
Page Write
The Page Write mode allows up to 64 bytes to be
written on a single page in a single go. This is
achieved through a series of successive Write
operations, no two of which are separated by more
than the tWLQ5H value (as specified in Table 10A
to Table 10C).
All bytes must be located on the same page
address (A12-A6 must be the same for all bytes).
The internal write cycle can start at any instant
after tWLQ5H. Once initiated, the write operation is
internally timed, and continues, uninterrupted,
until completion.
As with the single byte Write operation, described
above, the DQ5, DQ6 and DQ7 lines can be used
to detect the beginning and end of the internally
controlled phase of the Page Write cycle.
Software Data Protection (SDP)
The device offers a software-controlled write-
protection mechanism that allows the user to
inhibit all write operations to the device. This can
be useful
for protecting
the
memory
from
inadvertent write cycles that may occur during
periods of instability (uncontrolled bus conditions
when excessive noise is detected, or when power
supply levels are outside their specified values).
By
default,
the
device
is
shipped
in
the
“unprotected” state: the memory contents can be
freely changed by the user. Once the Software
Data Protection Mode is enabled, all write
commands are ignored, and have no effect on the
memory contents.
The device remains in this mode until a valid
Software Data Protection disable sequence is
received. The device reverts to its “unprotected”
state.
The status of the Software Data Protection
(enabled or disabled) is represented by a non-
Figure 4. Software Data Protection Enable Algorithm and Memory Write
Note: 1. The most significant address bits (A12 to A6) differ during these specific Page Write operations.
AI01356C
Write AAh in
Address 1555h
Write 55h in
Address 0AAAh
Write A0h in
Address 1555h
SDP is set
Write AAh in
Address 1555h
Write 55h in
Address 0AAAh
Write A0h in
Address 1555h
Page Write
(1 up to 64 bytes)
Write to Memory
When SDP is SET
SDP Enable Algorithm
Page Write
Timing
(see note 1)
Page Write
Timing
(see note 1)
Write
is enabled
Physical
Page Write
Instruction


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